PART |
Description |
Maker |
LS14500EX |
3.6 V Primary lithium-thionyl chloride High energy density AA-size bobbin cell
|
saftbatteries
|
LS17500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density A-size bobbin cell
|
SAFT
|
LS14500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell
|
SAFT
|
UPS122406 |
Its characteristics are high energy density, small footprint and high discharge efficiency.
|
CSB Battery Co., Ltd.
|
ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD 170 MHz in-system prommable high density PLD 125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD CRYSTAL 24.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
|
Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI20 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFAST?/a> High Density PLD In-System Programmable SuperFAST High Density PLD In-System Programmable SuperFAST⑩ High Density PLD In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP128 In-System Programmable SuperFAST??High Density PLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor, Corp. LATTICE SEMICONDUCTOR CORP
|
ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD In-System Programmable 3.3V SuperWIDE⑩ High Density PLD In-System Programmable 3.3V SuperWIDE High Density PLD 110 MHz in-system prommable 3.3V superWIDE high density PLD
|
LATTICE[Lattice Semiconductor]
|
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
ISPLSI1032 ISPLSI1032-60LG_883 ISPLSI1032-80LJ ISP |
In-System Programmable High Density PLD EE PLD, 17 ns, PQCC84 High-Density Programmable Logic
|
Lattice Semiconductor, Corp. LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation
|
IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI |
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 10 ns, PQFP80 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 6.5 ns, PQFP80 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 3.3伏高密度SUPERSYNC二窄总线先进先出 Octal bus transceiver/register (3-State) - Description: Transceiver/Register (3-State) ; Fmax: 350 MHz; Logic switching levels: TTL ; Number of pins: 24 ; Output drive capability: -32/ 64 mA ; Propagation delay: 4.4 ns; Voltage: 4.5-5.5 V
|
Integrated Device Technology, Inc.
|